IDT70261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (6,7)
70261X15
Com'l Only
70261X20
Com'l & Ind
70261X25
Com'l & Ind
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/ S =V IH )
t BAA
t BDA
t BAC
t BDC
BUSY Access Time from Address Match
BUSY Disable Time from Address Not Matched
BUSY Acce ss Time from Chip Enable Low
BUSY Acce ss Time from Chip Enable High
____
____
____
____
15
15
15
15
____
____
____
____
20
20
20
17
____
____
____
____
20
20
20
17
ns
ns
ns
ns
BUSY Disable to Valid Data
Write Hold After BUSY
t APS
t BDD
t WH
Arbitration Priority Set-up Time
(3)
(5)
(2)
5
____
12
____
18
____
5
____
15
____
30
____
5
____
17
____
30
____
ns
ns
ns
BUSY TIMING (M/ S =V IL )
Write Hold After BUSY
t WB
t WH
BUSY Input to Write (4)
(5)
0
12
____
____
0
15
____
____
0
17
____
____
ns
ns
PORT-TO-PORT DELAY TIMING
t WDD
Write Pulse to Data Delay (1)
____
30
____
45
____
50
ns
t DDD
Write Data Valid to Read Data Delay
(1)
____
25
____
30
____
35
ns
3039 tbl 14a
70261X35
Com'l Only
70261X55
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/ S =V IH )
Write Hold After BUSY
t BAA
t BDA
t BAC
t BDC
t APS
t BDD
t WH
BUSY Access Time from Address Match
BUSY Disable Time from Address Not Matched
BUSY Acce ss Time from Chip Enable Low
BUSY Acce ss Time from Chip Enable High
Arbitration Priority Set-up Time (2)
BUSY Disable to Valid Data (3)
(5)
____
____
____
____
5
____
25
20
20
20
20
____
35
____
____
____
____
____
5
____
25
45
40
40
35
____
40
____
ns
ns
ns
ns
ns
ns
ns
BUSY TIMING (M/ S =V IL )
Write Hold After BUSY
t WB
t WH
BUSY Input to Write (4)
(5)
0
25
____
____
0
25
____
____
ns
ns
PORT-TO-PORT DELAY TIMING
t WDD
t DDD
Write Pulse to Data Delay (1)
Write Data Valid to Read Data Delay (1)
____
____
60
45
____
____
80
65
ns
ns
NOTES:
3039 tbl 14b
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Wave form of Write with Port-to-Port Read and BUSY (M/ S = V IH )".
2. To ensure that the earlier of the two ports wins.
3. t BDD is a calculated parameter and is the greater of 0, t WDD – t WP (actual), or t DDD – t DW (actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
6. 'X' in part numbers indicates power rating (S or L).
11
6.42
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IDT70261L25PFI 制造商:IDT 功能描述:SRAM Chip Async Dual 5V 256K-Bit 16K x 16 25ns 100-Pin TQFP Tray
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